Green III-V semiconductor lasers capture laser projection
17.11.2011 - Photonik international /2011 | [ deutsche Version lesen ]
"It took some time before direct green diode laser light could be generated without complex frequency conversion. Due to technical barriers, lasers reached an emission wavelength of not more than 490 nm in the InGaN material system. In 2009 the first lasers broke that barrier with 500 nm which triggered eager research activities all over the world. Top laboratories at universities and industry are competing in the race for direct green lasers. Various crystal orientations are studied to increase output power and efficiency of green InGaN lasers. At present green lasers on c-plane GaN substrates hold the record with efficiencies up to 6% at 80 mW optical output power in continuous wave operation mode at >520 nm wavelength ."
Authors: Stephan Lutgen, Adrian Avramescu, Teresa Lermer, Jens Müller, Georg Brüderl, Christoph Eichler, Uwe Strauß, Osram Opto Semiconductors GmbH, Regensburg, Germany